How does the presence of defects influence the quality of MoS2-Au contacts in two-dimensional nanodevices? Check out our new work at ACS Applied Nano Materials:  https://pubs.acs.org/doi/10.1021/acsanm.2c00995

Abstract: The functionality and performance of devices based on atomically thin two-dimensional (2D) materials strongly depend on the quality of the employed 2D material. Although molybdenum disulfide (MoS 2) is an excellent candidate for future applications in nanoelectronics, MoS 2 films have not yet reached the level of purity achieved in silicon technologies. At present, the formation of small and extended defects in the material is inevitable during the growth process, and this has a non-negligible impact on the electronic properties of MoS2. Furthermore, defects are also thought to affect nontrivially the resistance at the MoS2−metal contact and the injection of carriers. In this work, we systematically and thoroughly assess the impact of some of the most commonly occurring defects in MoS2 (such as vacancies, substitutions, and grain boundaries) not only from the point of view of the material’s properties but also by looking at MoS 2−metal contacts. To do so, we carry out ab initio computer simulations in the density functional theory (DFT) framework coupled with surface simulations based on the Green’s function formalism. Our simulation approach allows us to obtain more realistic models of MoS 2 interfaces with Au. Moreover, this is the first theoretical study in which the effect of grain boundaries on the MoS 2−Au contact properties is explored. Results suggest that S vacancies have a detrimental impact on the quality of the metal contacts, whereas Mo vacancies strongly improve the electron injection from the metal to MoS2. Antisite Mo defects also increase the electron injection rate by acting as “conductive bridges” between the Au electrode and the 2D material. Finally, each of the grain boundaries considered here improves the quality of the contact. We expect our study to provide the necessary theoretical foundation for the design of MoS 2−metal contacts with suitable characteristics.

KEYWORDS:MoS2, two-dimensional materials, nanodevices, metal contact, density functional theory, memristor, FET

Authors: Gabriele Boschetto, Stefania Carapezzi, Corentin Delacour, Madeleine Abernot, Thierry Gil, and Aida Todri-Sanial

Laboratory of Computer Science, Robotics, and Microelectronics, University of Montpellier, CNRS