Two-dimensional materials (2DMs), including transition metal dichalcogenides (TMDs) as well as graphene, provide the option of ultimate thin channel transistors and the opportunity for new device architectures. The ability to control the channel thickness at the atomic level results in improved gate control over the channel barrier and reduced short-channel effects, which are some of the critical issues in deeply scaled devices. 2D materials possess sizeable bandgaps that can be useful for electronics. This has led to intensive research of 2DMs in nanoelectronics application and on novel digital CMOS devices in the More Than Moore domain. We investigate on the recent advancements of the most promising 2D materials for electronic devices, and we will focus on the development of compact device models for circuit-level simulations to fully explore the benefits and costs of 2DM technology.
We investigate 1D (carbon nanotubes) and 2D (MoS2, WSe2, etc.) materials for biosensing application with the aim to increase sensibility and selectivity of the biosensor. We explore mostly field-effect transistor based biosensors and investigate ion and electron transport to obtain the concentration of biomolecules present on the FET channel.