We were thrilled to present our recent work on HfO2 memristor for neuromorphic computing at Nanoge Matsus 2025 conference. Our post-doc Dr. Simanta Lahkar presented our work entitled “Insights into the Precise Atomistic Mechanisms Underlying the Forming Process in Bilayer Metal Oxide Resistive RAMs”.
For more information https://www.nanoge.org/MATSUSSpring25/program/program?t=668279e73aab4d6a2ce8b928